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GaN power amplifiers

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
102 KB
Volume
16
Category
Article
ISSN
0961-1290

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πŸ“œ SIMILAR VOLUMES

Nitronex Gan RF power amplifiers
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Sirenza Microdevices Inc has received US patent number 6,639,473 entitled "Method and/or apparatus for controlling a common-base amplifier," its sixth US patent in the area of broadband amplifier ICs, with its approach for improving distortion of common-base pre-amplifiers for wireless and fiber opt

Dual band power amplifier in GaN technol
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## Abstract Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output p

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## Abstract In this contribution the features of GaN technology for power applications will be explored from the designer point of view. Therefore, the active device will be studied as a black box using its simplified model and putting in evidence the role of its key parameters such as the knee vol

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## Abstract A radial‐basis function neural network (RBFNN) approach is proposed for predicting the nonlinear behaviors of gallium nitride (GaN) Doherty amplifier. Sampled input and output data from a designed GaN Doherty amplifier were used to train and test the proposed RBFNN model. Comparison of

Wide-band hybrid power amplifier design
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In this article, the design, fabrication, and testing of a wide band single-ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The singleended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. V