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Dual band power amplifier in GaN technology

✍ Scribed by Paolo Colantonio; Franco Giannini; Rocco Giofrè; Luca Piazzon

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
262 KB
Volume
50
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output power in the first (at 2.45 GHz) and second (at 3.3 GHz) bands, respectively. Moreover, a zero transmission condition has been obtained, resulting in a measured value of S~21~ lower than −15 dB at 2.8 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1040–1042, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23308

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