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Wide-band hybrid power amplifier design using GaN FETs

✍ Scribed by D. Xiao; D. Schreurs; C. Van Niekerk; W. De Raedt; J. Derluyn; M. Germain; B. Nauwelaers; G. Borghs

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 352 KB
Volume: 18
Category: Article
ISSN: 1096-4290
DOI: 10.1002/mmce.20329

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✦ Synopsis

In this article, the design, fabrication, and testing of a wide band single-ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The singleended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. V

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Design strategies for dual-band Class-E

Design strategies for dual-band Class-E power amplifier using composite right/left-handed transmission lines

✍ Mury Thian; Vincent Fusco 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract In this article we propose a technique for dual‐band Class‐E power amplifier design using composite right/left‐handed transmission lines, CRLH TLs. Design equations are presented and design procedures are elaborated. Because of the nonlinear phase dispersion characteristic of CRLH TLs,