𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Evaluation of GaN technology in power amplifier design

✍ Scribed by Paolo Colantonio; Franco Giannini; Rocco Giofrè; Luca Piazzon

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
154 KB
Volume
51
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

In this contribution the features of GaN technology for power applications will be explored from the designer point of view. Therefore, the active device will be studied as a black box using its simplified model and putting in evidence the role of its key parameters such as the knee voltage, the breakdown voltage, etc. At the end, the experimental results of several power amplifiers designed using different strategies will be presented to highlight both, the capabilities and/or drawbacks of such material. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 42–44, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23958

📜 SIMILAR VOLUMES

Dual band power amplifier in GaN technol
Dual band power amplifier in GaN technology
✍ Paolo Colantonio; Franco Giannini; Rocco Giofrè; Luca Piazzon 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 262 KB

## Abstract Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output p

Wide-band hybrid power amplifier design
Wide-band hybrid power amplifier design using GaN FETs
✍ D. Xiao; D. Schreurs; C. Van Niekerk; W. De Raedt; J. Derluyn; M. Germain; B. Na 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 352 KB

In this article, the design, fabrication, and testing of a wide band single-ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The singleended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. V

Large-signal modeling methodology for Ga
Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design
✍ Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 466 KB

A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The

The design of high-performance Doherty p
The design of high-performance Doherty power amplifier
✍ Yong-Bo Xiang; Guang-Ming Wang 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 250 KB

## Abstract The article presents a Doherty power amplifier (DPA) with both high efficiency and good linearity for GSM base station using LDMOS transistors. Prepositive delay line structure (PDL) is proposed to satisfy the performances, both higher efficiency and better linearity are achieved. The t

Nonlinear behavioral of GaN Doherty powe
Nonlinear behavioral of GaN Doherty power amplifiers using neural modeling
✍ Haiwen Liu 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 294 KB

## Abstract A radial‐basis function neural network (RBFNN) approach is proposed for predicting the nonlinear behaviors of gallium nitride (GaN) Doherty amplifier. Sampled input and output data from a designed GaN Doherty amplifier were used to train and test the proposed RBFNN model. Comparison of

On design of linear RF power amplifier f
On design of linear RF power amplifier for CDMA signals
✍ Qiang Wu; Martina Testa; Robert Larkin 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB 👁 2 views

In this paper, we analyze the nonlinear effect of an RF power amplifier on CDMA signals and then derive the direct relation between the power transistor's traditional ( ) nonlinearity parameter, the third order intermodulation coefficient IP , and an estimate 3 [ ] of the out-of-band emission levels