## Abstract In this article, we discuss the accuracy of behavioral models in simulating the intermodulation distortion (IMD) of microwave GaN‐based high‐power amplifiers in the presence of strong electrothermal (ET) feedback. Exploiting an accurate self‐consistent ET model derived from measurements
Nonlinear behavioral of GaN Doherty power amplifiers using neural modeling
✍ Scribed by Haiwen Liu
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 294 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A radial‐basis function neural network (RBFNN) approach is proposed for predicting the nonlinear behaviors of gallium nitride (GaN) Doherty amplifier. Sampled input and output data from a designed GaN Doherty amplifier were used to train and test the proposed RBFNN model. Comparison of amplitude modulation to amplitude modulation (AM/AM), amplitude modulation to phase modulation (AM/PM), gain, power added efficiency (PAE) and output power (Pout) curves among the RBFNN method, circuit simulation and measurement are given. The results indicate that the proposed RBFNN model can reproduce the nonlinear characteristics of the designed GaN Doherty amplifier accurately. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 307–309, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24924
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