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Behavioral modeling of GaN-based power amplifiers: Impact of electrothermal feedback on the model accuracy and identification

✍ Scribed by Roberto Quaglia; Vittorio Camarchia; Federica Cappelluti; Simona Donati Guerrieri; Eduardo G. Lima; Giovanni Ghione; Marco Pirola


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
219 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

In this article, we discuss the accuracy of behavioral models in simulating the intermodulation distortion (IMD) of microwave GaN‐based high‐power amplifiers in the presence of strong electrothermal (ET) feedback. Exploiting an accurate self‐consistent ET model derived from measurements and thermal finite‐element method simulations, we show that behavioral models are able to yield accurate results, provided that the model identification is carried out with signals with wide bandwidth and large dynamics. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2789–2792, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24732