No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this article, we propose the wideband digital predistortion (WDPD) for a highly linear and efficient GaN HEMT Doherty power amplifier (DPA). The WDPD is composed of the memory less DPD and the memory system, which compensates for the memory effects to achieve a highly linear wideband
Sirenza Microdevices Inc has received US patent number 6,639,473 entitled "Method and/or apparatus for controlling a common-base amplifier," its sixth US patent in the area of broadband amplifier ICs, with its approach for improving distortion of common-base pre-amplifiers for wireless and fiber opt
## Abstract In this letter, a highly efficient classβF power amplifier (PA) is developed as a new main block of the wideband baseβstation linear power amplifier. The classβF PA is implemented using Eudyna EGN010MK GaN HEMT with a 10βW peak envelop power. The nonlinearity and memory effects of class
## Abstract In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dualβfed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA i
## Abstract Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output p