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Sirenza Microdevices Inc has received US patent number 6,639,473 entitled "Method and/or apparatus for controlling a common-base amplifier," its sixth US patent in the area of broadband amplifier ICs, with its approach for improving distortion of common-base pre-amplifiers for wireless and fiber optic applications.
"This invention could provide improved signal integrity for balanced-detection, advanced optical receiver architectures, currently under investigation for future fiber network systems," said Kevin Kobayashi, director of Advanced Design.
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A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The
## Abstract Experimental results of a simultaneous dual band high efficiency harmonic tuned power amplifier in GaN HEMT technology are presented. The amplifier has been realized in hybrid form and the measured results shown a peak of 53% and 46% of drain efficiency with 33 dBm and 32.5 dBm output p