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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

✍ Scribed by Schwarz, C.; Yadav, A.; Shatkhin, M.; Flitsiyan, E.; Chernyak, L.; Kasiyan, V.; Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Lo, C. F.; Johnson, J. W.; Danilova, E.


Book ID
125520312
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
591 KB
Volume
102
Category
Article
ISSN
0003-6951

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Neutron irradiation on AlGaN/GaN high el
✍ Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 554 KB

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Γ‚ 100 mm 2 gate were irradiated with a dose of 2.8 Γ‚ 10 11 cm Γ€ 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur