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Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

✍ Scribed by Killat, N.; Uren, M. J.; Keller, S.; Kolluri, S.; Mishra, U. K.; Kuball, M.

Book ID: 126717478
Publisher: American Institute of Physics
Year: 2014
Tongue: English
Weight: 782 KB
Volume: 105
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4892449

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