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Fully silicided NiSi gate on La2O3 MOSFETs

✍ Scribed by C. Lin; M. Ma; A. Chin; Y. Yeo; Chunxiang Zhu; M. Li; Dim-lee Kwong

Book ID
126608160
Publisher
IEEE
Year
2003
Tongue
English
Weight
247 KB
Volume
24
Category
Article
ISSN
0741-3106

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Schottky barrier SOI-MOSFETs with high-k
Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter