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Studies on Al2O3/ZrO2/Al2O3high K gate dielectrics applied in a fully depleted SOI MOSFET

✍ Scribed by Chenglu Lin; Ninglin Zhang; Qinwo Shen

Book ID
105696625
Publisher
TechnoPress
Year
2004
Tongue
English
Weight
623 KB
Volume
10
Category
Article
ISSN
1598-9623

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πŸ“œ SIMILAR VOLUMES

Schottky barrier SOI-MOSFETs with high-k
Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter