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High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing

✍ Scribed by Chih-Sheng Kuo; Jui-Feng Hsu; Szu-Wei Huang; Lurng-Shehng Lee; Ming-Jinn Tsai; Jenn-Gwo Hwu

No coin nor oath required. For personal study only.

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