[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

✍ Scribed by Song, S.C.; Luan, H.F.; Lee, C.H.; Mao, A.Y.; Lee, S.J.; Gelpey, J.; Marcus, M.; Kwong, D.L.

• Book ID: 126708737
• Publisher: IEEE
• Year: 1999
• Weight: 279 KB
• Category: Article
• ISBN-13: 9780780356207
• DOI: 10.1109/VTSA.1999.786004