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[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs

✍ Scribed by van Meer, A.; Jeongho Lyu, ; Kubicek, S.; de Meyer, S.

Book ID: 126722528
Publisher: IEEE
Year: 1999
Weight: 258 KB
Category: Article
ISBN-13: 9780780356207
DOI: 10.1109/VTSA.1999.785992

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