Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

✍ Scribed by Ching-Hang Chen; Jenn-Gwo Hwu

• Book ID: 104052458
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 319 KB
• Volume: 87
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.09.013