Reliability of Low-Temperature-Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-Effective Nitric Acid Oxidation Technique

✍ Scribed by Chia-hua Chang; Jenn-gwo Hwu

• Book ID: 126765541
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 224 KB
• Volume: 7
• Category: Article
• ISSN: 1530-4388
• DOI: 10.1109/TDMR.2007.910129