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Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

✍ Scribed by Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai

Book ID
104058022
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
324 KB
Volume
48
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

Schottky barrier SOI-MOSFETs with high-k
Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter