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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

✍ Scribed by D. Wu; M. von Haartman; J. Seger; E. Tois; M. Tuominen; P.-E. Hellström; M. Östling; S.-L. Zhang

No coin nor oath required. For personal study only.

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