In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of
β¦ LIBER β¦
Distribution and generation of traps in SiO2/Al2O3 gate stacks
β Scribed by Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Roussel; Jan Van Houdt
- Book ID
- 108210683
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 129 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Profiling of traps in SiO2/Al2O3 gate st
β
Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Rous
π
Article
π
2006
π
Elsevier Science
π
English
β 132 KB
Defect generation in ultra-thin SiO2 gat
β
M Houssa; V.V Afanasβev; A Stesmans; M.M Heyns
π
Article
π
2001
π
Elsevier Science
π
English
β 122 KB
The generation of defects in ultra-thin SiO gate layers and SiO / ZrO gate stacks is studied through the time-dependent 2 2 2 current density variation DJ (t) 5 J (t) 2 J (0) observed during constant gate voltage stress of MOS capacitors. The time G G G dependence of the defect density variation DN
Charge trapping behavior of SiO2-Anodic
β
Chun-Hsien Huang; En-Jui Li; Wai-Jyh Chang; Na-Fu Wang; Chen-I Hung; Mau-Phon Ho
π
Article
π
2009
π
Elsevier Science
π
English
β 697 KB
Point defects in Al2O3 and their impact
β
J.R. Weber; A. Janotti; C.G. Van de Walle
π
Article
π
2009
π
Elsevier Science
π
English
β 365 KB
Characterization of charge trapping in S
β
Giuseppina Puzzilli; Bogdan Govoreanu; Fernanda Irrera; Maarten Rosmeulen; Jan V
π
Article
π
2007
π
Elsevier Science
π
English
β 465 KB
M2O-Al2O3-SiO2 glass gate PNA and pK ISF
β
Shunichi Shoji; Masayoshi Esashi; Tadayuki Matsuo
π
Article
π
1986
π
John Wiley and Sons
π
English
β 548 KB