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Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model

✍ Scribed by M Houssa; V.V Afanas’ev; A Stesmans; M.M Heyns

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
122 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis

The generation of defects in ultra-thin SiO gate layers and SiO / ZrO gate stacks is studied through the time-dependent 2 2 2 current density variation DJ (t) 5 J (t) 2 J (0) observed during constant gate voltage stress of MOS capacitors. The time G G G dependence of the defect density variation DN is calculated within a dispersive transport model, assuming that these defects ot are produced during the random hopping transport of positively charged species in the insulating layer. The stress voltage and gate insulator thickness dependence of DJ (t) can be very well reproduced by this model, and the values obtained for the G 1

fitting parameters are close to those pertaining to the dispersive transport of H .

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