Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack

✍ Scribed by A. Ohta; Y. Munetaka; A. Tsugou; K. Makihara; H. Murakami; S. Higashi; S. Miyazaki; S. Inumiya; Y. Nara

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 407 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.135