✦ LIBER ✦

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

✍ Scribed by Bigang Min; Devireddy, S.P.; Celik-Butler, Z.; Fang Wang; Zlotnicka, A.; Hsing-Huang Tseng; Tobin, P.J.

Book ID: 114617582
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 597 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.835982

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-frequency noise in submicrometer MOS

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

✍ Bigang Min; Devireddy, S.P.; Celik-Butler, Z.; Fang Wang; Zlotnicka, A.; Hsing-H 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 594 KB

Ni-salicided CMOS with a poly-SiGe/Al2O3

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

✍ D. Wu; M. von Haartman; J. Seger; E. Tois; M. Tuominen; P.-E. Hellström; M. Östl 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 413 KB

Effects of La2O3 incorporation in HfO2 g

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

✍ D. Zade; S. Sato; K. Kakushima; A. Srivastava; P. Ahmet; K. Tsutsui; A. Nishiyam 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 583 KB

Improved low frequency noise characteris

Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric

✍ Siva Prasad Devireddy; Bigang Min; Zeynep Çelik-Butler; Hsing-Huang Tseng; Phili 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 178 KB

Memory Effect of Metal-Insulator-Silicon

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3Multilayer and Hafnium Nitride Gate

✍ Shi-Jin Ding; Min Zhang; Wei Chen; David Wei Zhang; Li-Kang Wang 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 416 KB

Interfacial and Electrical Characterizat

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

✍ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen 📂 Article 📅 2009 🏛 Elsevier ⚖ 336 KB

HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha