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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

✍ Scribed by D. Zade; S. Sato; K. Kakushima; A. Srivastava; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; C.K. Sarkar; H. Iwai

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