Low-frequency noise behavior of SiO2--HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

✍ Scribed by Simoen, E.; Mercha, A.; Pantisano, L.; Claeys, C.; Young, E.

• Book ID: 114617419
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 282 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.826877