Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons

✍ Scribed by P. Srinivasan; B.P. Linder; V. Narayanan; D. Misra; E. Cartier

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 357 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.103