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Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer HfO2/SiO2 High- κ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

✍ Scribed by Wei-Hao Wu; Bing-Yue Tsui; Mao-Chieh Chen; Yong-Tian Hou; Yin Jin; Tao, H.-J.; Shih-Chang Chen; Mong-Song Liang


Book ID
114618732
Publisher
IEEE
Year
2007
Tongue
English
Weight
415 KB
Volume
54
Category
Article
ISSN
0018-9383

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