Low-frequency noise in TaSiN/HfO2 nMOSFETs and the effect of stress-relieved preoxide interfacial layer

✍ Scribed by Devireddy, S.P.; Bigang Min; Celik-Butler, Z.; Hsing-Huang Tseng; Tobin, P.J.; Fang Wang; Zlotnicka, A.

• Book ID: 114618128
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 507 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.863769