Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge

✍ Scribed by James Jer-Hueih Chen; Bojarezuk, N.A., Jr.; Huiling Shang; Copel, M.; Hannon, J.B.; Karasinski, J.; Preisler, E.; Banerjee, S.K.; Guha, S.

• Book ID: 114617536
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 568 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.833593