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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

✍ Scribed by M. Caymax; S. Van Elshocht; M. Houssa; A. Delabie; T. Conard; M. Meuris; M.M. Heyns; A. Dimoulas; S. Spiga; M. Fanciulli; J.W. Seo; L.V. Goncharova

Book ID
103843635
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
870 KB
Volume
135
Category
Article
ISSN
0921-5107

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Ultrathin HfO2 films grown on silicon by
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
✍ E.P. Gusev; C. Cabral Jr.; M. Copel; C. D’Emic; M. Gribelyuk πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 584 KB

We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp