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Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering

โœ Scribed by G. He; Q. Fang; G.H. Li; J.P. Zhang; L.D. Zhang

Book ID
108060261
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
766 KB
Volume
253
Category
Article
ISSN
0169-4332

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The NiO x thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O 2 with the relative O 2 content 5%. The as-deposited NiO x thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni 2 O 3 . Decompos