𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(0 0 1) misoriented by 10° to (1 1 1)A plane

✍ Scribed by V.I. Kozlovsky; V.P. Martovitsky


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
294 KB
Volume
404
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Spin–orbit dependence on carrier momentu
✍ O.D.D. Couto Jr.; J. Rudolph; F. Iikawa; R. Hey; P.V. Santos 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 148 KB

Surface acoustic waves (SAW) are employed to transport optically generated spin ensembles over distances exceeding 60 mm in (1 1 0) GaAs quantum wells (QW). The dependence of the spin-orbit (SO) coupling on carrier momentum is investigated by using SAWs to transport spins with well-defined velocity

Nonlinear properties in InxGa1 −&#x
✍ L. Calcagnile; A. Passaseo; R. Cingolani 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 44 KB

In this paper we investigated nonlinear properties and lasing in In x Ga 1-x As/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify

Magnetic properties of MnAs thin films g
✍ G.E. Sterbinsky; S.J. May; P.T. Chiu; B.W. Wessels 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 465 KB

The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single a phase at room temperature with a B-type varian

Temperature dependence of excitonic tran
✍ S.A. Lourenço; I.F.L. Dias; J.L. Duarte; E. Laureto; H. Iwamoto; E.A. Meneses; J 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 132 KB

The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier hei