In this contribution we present a study of the magnetic properties of MnAs thin films grown over GaAs(1 1 1) substrates, performed by ferromagnetic resonance experiments. We have calculated the magneto-crystalline anisotropy of the system analyzing the angular dependence of the resonance field with
Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE
β Scribed by G.E. Sterbinsky; S.J. May; P.T. Chiu; B.W. Wessels
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 465 KB
- Volume
- 388
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single a phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.
π SIMILAR VOLUMES
Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a parti