The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single a phase at room temperature with a B-type varian
Morphology and crystallographic properties of rubrene thin films grown on muscovite(0 0 1)
β Scribed by T. Djuric; A. Thierry; W. Grogger; Sh.M. Abd Al-Baqi; H. Sitter; R. Resel
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 494 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
β¦ Synopsis
Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a partially wetting regime where amorphous droplets are formed. Through diffusive interactions the droplets merge together in partially crystalline open networks. At a more advanced growth stage, spherulites are formed and a variety of crystalline morphologies appears. Platelet-and needle-like morphologies can be assigned to the orthorhombic phase of rubrene with the [3 0 1] and [11 0] zone axes, respectively.
π SIMILAR VOLUMES
The epitaxial growth of sexiphenyl (C 36 H 26 ) on an atomically clean aluminium (1 1 1) surface is studied on the basis of thin films grown at different substrate temperatures. Thin films with an average thickness of 350 A are investigated by X-ray diffraction techniques and atomic force microscop
A series of Ni films with thickness from 0.2 monolayers (ML) to 12.5 ML were epitaxially grown on a Pd(1 0 0) substrate at room temperature. Growth and morphology were investigated by scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and Auger electron spectros
The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi 4 Ti 3 O 12 , CaBi 4 Ti 4 O 15 and SrBi 4 Ti 4