Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a parti
Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (1 0 0) Pt electrodes
✍ Scribed by A.Z. Simões; C.S. Riccardi; A. Ries; M.A. Ramirez; E. Longo; J.A. Varela
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 567 KB
- Volume
- 196
- Category
- Article
- ISSN
- 0924-0136
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✦ Synopsis
The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi 4 Ti 3 O 12 , CaBi 4 Ti 4 O 15 and SrBi 4 Ti 4 O 15 films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films.
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