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Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (1 0 0) Pt electrodes

✍ Scribed by A.Z. Simões; C.S. Riccardi; A. Ries; M.A. Ramirez; E. Longo; J.A. Varela


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
567 KB
Volume
196
Category
Article
ISSN
0924-0136

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✦ Synopsis


The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi 4 Ti 3 O 12 , CaBi 4 Ti 4 O 15 and SrBi 4 Ti 4 O 15 films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films.


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