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The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (0 0 1) and (1 1 1) orientations

✍ Scribed by K. Köksal; B. Gönül


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
552 KB
Volume
43
Category
Article
ISSN
1386-9477

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ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the