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Nonlinear properties in InxGa1 − xAs/GaAs multiple quantum well laser structures

✍ Scribed by L. Calcagnile; A. Passaseo; R. Cingolani

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
44 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

In this paper we investigated nonlinear properties and lasing in In x Ga 1-x As/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify the minimum well width for observing stimulated emission from well states. We also determined the threshold for stimulated emission for well and barrier lasing. Radiative recombination energies are identified by using theoretical data obtained in the effective mass approximation, including boundary conditions and strain.

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