𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Stark shifts and mean lifetimes for AlxGa1 − xAs/GaAs single quantum wells

✍ Scribed by Sudhira Panda; E.Herbert Li

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
147 KB
Volume
22
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Doping profile effects on modulation-dop
Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1 − xAs quantum wells
✍ H. Wang; G.A. Farias; V.N. Freire 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 310 KB

We study inhomogeneous doping effects on the confinement properties of modulationdoped single nonabrupt GaAs/Al x Ga 1-x As quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrödinger (with a position dependent kinetic ene

Accumulation layer and interface effects
Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1 − xAs single quantum wells
✍ A.K. Freire; G.A. Farias; V.N. Freire; E.C. Ferreira 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 93 KB

The electron energy levels in doped nonabrupt GaAs/Al x Ga 1-x As single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are impor

Temperature dependence of excitonic tran
Temperature dependence of excitonic transitions in AlxGa1 − xAs/GaAs quantum wells
✍ S.A. Lourenço; I.F.L. Dias; J.L. Duarte; E. Laureto; H. Iwamoto; E.A. Meneses; J 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 132 KB

The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier hei

Cavity size and temperature dependence o
Cavity size and temperature dependence of stimulated emission in single Zn1 − xCdxSe/ZnSe quantum-well lasers
✍ L. Calcagnile; M. Lomascolo; R. Cingolani; L. Sorba; A. Franciosi 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 49 KB

We observed stimulated emission originating from light-hole transitions in single Zn 1-x Cd x Se quantum-well structures, using high excitation photoluminescence spectroscopy as a function of temperature and cavity length. We found that the lasing wavelength depends on the cavity length, and can be

Arguments for p-type Si 1 − xG
Arguments for p-type Si 1 − xGe x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared
✍ M.A Gadir; P Harrison; R.A Soref 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 366 KB

An analysis, by a carrier scattering approach, of the thermionic emission contribution to the dark current is carried out in conventional bound-to-continuum quantum well infrared photodetectors (QWIPs). It is found that the thermionic emission increases with increasing temperature or when extending