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Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1 − xAs quantum wells

✍ Scribed by H. Wang; G.A. Farias; V.N. Freire

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
310 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

We study inhomogeneous doping effects on the confinement properties of modulationdoped single nonabrupt GaAs/Al x Ga 1-x As quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrödinger (with a position dependent kinetic energy operator) and Poisson equations to obtain the electron energy levels. When the nonabrupt interfaces (spacer layer) are 10 Å (100 Å) wide and the presence of Si-dopant density in a 100 Å GaAs well region is only 10% of the Si-dopant density in the Al 0.3 Ga 0.7 As barriers, the lowest intersubband transition energy increases 37 meV in comparison with that calculated within the homogeneous doping-abrupt interface picture.

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