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Temperature dependence of excitonic transitions in AlxGa1 − xAs/GaAs quantum wells

✍ Scribed by S.A. Lourenço; I.F.L. Dias; J.L. Duarte; E. Laureto; H. Iwamoto; E.A. Meneses; J.R. Leite

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
132 KB
Volume
29
Category
Article
ISSN
0749-6036

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✦ Synopsis

The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier height is observed. The influence of the barrier height on the temperature dependence of excitonic states in the quantum wells is analyzed.

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