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Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1 − xAs single quantum wells

✍ Scribed by A.K. Freire; G.A. Farias; V.N. Freire; E.C. Ferreira

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
93 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis

The electron energy levels in doped nonabrupt GaAs/Al x Ga 1-x As single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are important and sensitive to the level of doping. When interfaces of only two GaAs unit cells and a band bending of 40 meV are considered, the ground-state (first excited state) energy level shifts toward energies as high as 4 meV (20 meV).

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