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Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1-xAs heterojunctions

✍ Scribed by Alexander K. Freire; J.Ribeiro Filho; Gil A. Farias; Valder N. Freire

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
159 KB
Volume
17
Category
Article
ISSN
0749-6036

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✦ Synopsis

A theoretical model is proposed to describe doped nonabrupt (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x} \mathrm{As}) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface effects are important in the case of high doping levels, and wide (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x} \mathrm{As}) interfaces.

(c) 1995 Academic Press Limited

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