Transmission in compositionally nonabrupt GaAs/AlxGa1-xAs heterojunctions: beyond the constant interfacial effective-mass approximation
✍ Scribed by J.Ribeiro Filho; G.A. Farias; V.N. Freire
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 254 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The transmission properties of compositionally nonabrupt (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x} \mathrm{As}) heterojunctions are calculated by taking into account the spatial dependence of the carrier effective mass through the nonabrupt interface. The description of the nonabrupt heterojunctions is obtained with the assumption of a linear aluminium molar fraction variation in the interface. A multistep technique is used for the numerical solution of the Hamiltonian with a space dependent effective mass. The linear spatial dependence of the effective mass through the interface changes the transmission properties of compositionally nonabrupt (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x} \mathrm{As}) heterojunctions in comparison with those obtained with the constant effective mass approximation. The absence of resonant peaks for large interface widths is shown for electrons and holes, in disagreement with a prior prediction of their existence.