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Exciton binding energies in GaN/AlxGa1 − xN pseudomorphic quantum wells

✍ Scribed by J.-B Jeon; G.D Sanders; K.W Kim; M.A Littlejohn

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
152 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

Interband transitions of pseudomorphic GaN/Al x Ga 1-x N quantum wells are analysed theoretically with respect to the piezoelectric field utilizing a 6×6 Rashba-Sheka-Pikus (RSP) Hamiltonian. Band structure modifications due to the built-in Stark effect explain a shift of the emission peak in GaN/Al 0.15 Ga 0.85 N of up to 400 meV. Quantum well exciton binding energies are calculated by the variational method and are discussed in terms of spatial separation of electrons and holes by the built-in electric field, as well as the interaction between valence subbands.

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