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The Exciton Transition Energies in Symmetric Double GaAs/AlxGa1–xAs Quantum Wells

✍ Scribed by S. E. Okan; Ş. Aktaş; H. Akbaş; M. Tomak


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
186 KB
Volume
212
Category
Article
ISSN
0370-1972

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Spatially Indirect Excitons in GaAs/Al0.
✍ Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB

We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect