Stokes shift in one-side modulation-n-doped-strained GaxIn1 − xAs/InP asymmetric quantum well

✍ Scribed by Qu Fanyao; A.L.A. Fonseca; O.A.C. Nunes

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 287 KB
• Volume: 26
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1999.0791

✦ Synopsis

The effects of strain on the Stokes shift in one-side modulation-doped Ga x In 1-x As/InP asymmetric quantum wells (AQWs) are systematically investigated. By making use of a self-consistent Poisson-Schrödinger solver in the frame of a finite difference method, the quasi-Fermi levels and the band bending are determined under the effective mass approximation. The central-zone valence-band structures for compressively strained and tensile strained AQWs were calculated by making use of a four-band Luttinger-Kohn Hamiltonian. It was found that the strain influences the relative positions of the heavy-hole HH 1 and the light-hole LH 1 subbands and that the Stokes shifts are greatly reduced by tensile strain in the case of a Ga 0.6 In 0.4 As/InP AQW. Moreover, it was found that due to the presence of the two-dimensional electron gas the Stokes shifts in AQWs are much larger than the corresponding ones for a square quantum well. Also, the variation of the Stokes shift with spacer layer width for compressively strained AQWs was found to be more rapid than that for tensile strained AQWs.