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Energy levels of single nonabrupt GaAs/AlxGa1-xAs quantum wells

✍ Scribed by Eraldo C. Ferreira; J.Alzamir P. da Costa; Gil A. Farias; Valder N. Freire

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
173 KB
Volume
17
Category
Article
ISSN
0749-6036

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✦ Synopsis

Energy levels of electrons in nonabrupt (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x} \mathrm{As}) single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt (\mathrm{GaAs} / \mathrm{Al}{x} \mathrm{Ga}{1-x}) As quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry.

(C) 1995 Academic Press Limited

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