Electro-absorption modulator using a type-II quantum well in the InxGa1 − xAs/InAlAs/InP system

✍ Scribed by C. Lugand; T. Benyattou; G. Guillot; T. Venet; M. Gendry; G. Hollinger

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 107 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0310

✦ Synopsis

In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile strained (x = 0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the tensile layer and in the LM layer. This study allows us to deduce an accurate determination of the conduction band offset in the In 0.3 Ga 0.7 As/In 0.53 Ga 0,47 As/InP system. Moreover, we include the previous type-II structure between InAlAs barriers in order to confine both electrons and holes. This structure has potential applications in electrooptical modulators. We simulate its optical modulation by solving the Schrödinger equation using the envelope function approximation and calculating the absorption spectrum taking into account excitonic effects.