𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Spin–orbit dependence on carrier momentum in (1 1 0) GaAs quantum wells

✍ Scribed by O.D.D. Couto Jr.; J. Rudolph; F. Iikawa; R. Hey; P.V. Santos


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
148 KB
Volume
40
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

✦ Synopsis


Surface acoustic waves (SAW) are employed to transport optically generated spin ensembles over distances exceeding 60 mm in (1 1 0) GaAs quantum wells (QW). The dependence of the spin-orbit (SO) coupling on carrier momentum is investigated by using SAWs to transport spins with well-defined velocity along different directions in the QW plane. For transport along the [0 0 1] direction, the high relaxation rates for the in-plane spin component lead to fast spin decoherence under a magnetic field. For the ½ 1 1 0 direction, in contrast, a non-zero average value of the SO internal magnetic field retards the longitudinal spin relaxation.


📜 SIMILAR VOLUMES


Temperature dependence of excitonic tran
✍ S.A. Lourenço; I.F.L. Dias; J.L. Duarte; E. Laureto; H. Iwamoto; E.A. Meneses; J 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 132 KB

The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier hei

Detection of large in-plane spin-dephasi
✍ L.F. Han; X.H. Zhang; H.Q. Ni; Z.C. Niu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 407 KB

The electron density-dependent in-plane spin dephasing anisotropy in GaAs/AlGaAs single quantum wells has been investigated by time-resolved magneto-Kerr rotation (TR-MOKE) measurements. Large anisotropy of in-plane spin dephasing time has been observed and compared for samples with different degree

Well-width dependence of interface rough
✍ N. Balkan; R. Gupta; M. Cankurtaran; H. Çelik; A. Bayrakli; E. Tiras; M.Ç Arikan 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 116 KB

Well-width dependence of quantum and transport mobilities of electrons in GaAs/GaAlAs multiple quantum wells is studied for wells with widths ranging between 50 Å and 145 Å. Experimental results are obtained from the amplitude analysis of the Shubnikov-de Haas (SdH) oscillations and from conventiona

Nonlinear properties in InxGa1 −&#x
✍ L. Calcagnile; A. Passaseo; R. Cingolani 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 44 KB

In this paper we investigated nonlinear properties and lasing in In x Ga 1-x As/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify

(1 0 0) GaAs/AlxGa1−xAs hetero
✍ K. Trunov; D. Reuter; A. Ludwig; J.C.H. Chen; O. Klochan; A.P. Micolich; A.R. Ha 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 729 KB

We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3