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(1 0 0) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires

✍ Scribed by K. Trunov; D. Reuter; A. Ludwig; J.C.H. Chen; O. Klochan; A.P. Micolich; A.R. Hamilton; A.D. Wieck

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
729 KB
Volume
323
Category
Article
ISSN
0022-0248

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✦ Synopsis

We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3 1 1) substrates. Finally we present conductance quantization data for hole quantum wires made of these (1 0 0) heterostructures.

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